This is our EPD(End Point Detection)/OES(Optical Emission Spectroscopy) solution designed for detecting endpoint and monitoring process state change in the semiconductor and display manufacturing using plasma spectroscopy technology.
√ Control the process accurately and stably √ Improve production yield-rate √ Respose to the changes of process promptly √ Rich experience on various processes environment √ Available optimized solution for H/W or S/W to detect an endpoint
√ End Point Detection, Process fault Detection √ Dry etcher/Asher/PECVD @Semiconductor/display manufacturing √ Increase throughput by determining the optimal etch time √ Detect process endpoint through in-situ monitoring optical change in the plasma chamber
OPTI-L10 BT - 2D CCD (2048*64pixels) - S/N Ratio 450:1 - Enhanced Sensitivity(especially at UV range)
OPTI-PLUS - for Etch Process - Local Controller at Each Chamber - Distributed Processing for Minimizing Risk of System Down
√ Customized Models to fit customer environment !!!
SMC-10 (standard type) - Horizontal Type - 3U 19” rack mount type
SMC-10H (I) - Vertical Type - Keyboard, Mouse, Monitor all in one type
SMC-10H (II) - Vertical Type - with Work Table & Monitor Arm
1. Wafer PR ashing & Al etching
- PR ashing (CO peak wavelength) - Single wafer type, Mass run
- Al etching (Al peak wavelength) - Wafer #10 batch type, Mass run
2. α-si LCD Process
Endpoint detection at the following processes
_ PR strip
3. Wafer multi-layer etching
4. LCD 4-mask multi-step
NANOTECH COMPANY REG NO : 109-81-54438 (16882) 261-1, Daeji-ro, Suji-gu, Yongin-si, Gyeonggi-do, South Korea Tel.82-2-837-8867~8. Fax.82-2-837-8820, E-mail. firstname.lastname@example.org Copyright(c) NANOTECH Company. All Rights Reserved.